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Specification of wan-sc001
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Version: September 7, 2019

Hubei DUVTek Co., Ltd.

Product specification
SPECIFICATIONS

Deep UV core material · SiC / AlN epitaxial wafer / template

WAlN-SC001

50~5000 nm,(002) ,(102)

SC001

Hubei DUVTek Co., Ltd.

Hubei DUVTek Co., LTD.

B08, East Lake high tech creative city, Phoenix Road, 9, Wu Tong Hu, Ezhou, Hubei
Building B08, Donghu High-tech Innovation City, No. 9 Fenghuang Avenue, Wutong Lake New District, Ezhou, Hubei, China

  • Characteristics
  • Performance properties Parameter value
    Diameter2 inch (50.8±0.05 μm)
    Substrate type6H/4H-SiC <0001>±0.5°, N type, D degree
    Substrate thickness330±25 μm
    Epilayer thickness50~5000 nm
    (002) crystal quality (FWHM of 002 XRC)
    (102) crystal quality (FWHM of 102 XRC)
    Front side roughness
    Edge exclusion
    Through crackundefined
    Surface orientation of a-plane
    Surface orientation of m-plane
    Primary flat orientation
    Primary flat length
    Back side roughness
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