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Wan-sa400 specification
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Version: September 7, 2019

Hubei DUVTek Co., Ltd.

Product specification
SPECIFICATIONS

Deep UV core material · Sapphire / AlN epitaxial wafer / template

WAlN-SA400

2~3 μm,(002) ≤ 80 arcsec,(102) ≤ 400 arcsec

SA400

Hubei DUVTek Co., Ltd.

Hubei DUVTek Co., LTD.

B08, East Lake high tech creative city, Phoenix Road, 9, Wu Tong Hu, Ezhou, Hubei
Building B08, Donghu High-tech Innovation City, No. 9 Fenghuang Avenue, Wutong Lake New District, Ezhou, Hubei, China

  • Characteristics
  • Performance properties Parameter value
    Diameter2 inch (50.8±0.05 μm)
    Substrate typeSapphire
    Substrate thickness430±20 μm
    Epilayer thickness2~3 μm
    (002) crystal quality (FWHM of 002 XRC)≤ 80 arcsec
    (102) crystal quality (FWHM of 102 XRC)≤ 400 arcsec
    Front side roughness≤ 1 nm
    Edge exclusion≤ 3 mm
    Through cracknone
    Surface orientation of a-plane0°±0.1°
    Surface orientation of m-plane0.2°±0.1°
    Primary flat orientationa-plane±0.1°
    Primary flat length16±1 mm
    Back side roughness0.8±0.2 μm
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